DSR05S30CTB Datasheet - Toshiba Semiconductor

DSR05S30CTB Silicon Epitaxial Schottky Barrier Type Diode

DSR05S30CTB TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR05S30CTB High Speed Switching Application Unit: mm 0.25±0.02 0.65±0.02 Absolute Maximum Ratings (Ta = 25°C) 0.7±0.02 1.2±0.05 CATHODE MARK Characteristic Symbol Rating Unit Reverse voltage Average forward current Surge current (10ms) Junction temperature Storage temperature range VR IO IFSM Tj Tstg 30 500＊ 5 125 55 to 125 V mA A °C °C 0.05±0.03 0.8±0.05 0.05±0.03 0.38+-00..0023 : Mounted on a g.

DSR05S30CTB-ToshibaSemiconductor.pdf