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K10A60DR - N-Channel MOSFET

This page provides the datasheet information for the K10A60DR, a member of the K10A60D N-Channel MOSFET family.

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Datasheet Details

Part number K10A60DR
Manufacturer Toshiba
File Size 202.57 KB
Description N-Channel MOSFET
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Full PDF Text Transcription

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TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.62Ω (typ.) • High forward transfer admittance: |Yfs| = 6.0S (typ.) • Low leakage current: IDSS = 10 μA (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.
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