K10A60D Description
TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.62Ω (typ.) High forward transfer admittance: |Yfs| = 6.0S (typ.) Low leakage current:.