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K10A60DR - N-Channel MOSFET

Download the K10A60DR datasheet PDF. This datasheet also covers the K10A60D variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (K10A60D_Toshiba.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.62Ω (typ.) • High forward transfer admittance: |Yfs| = 6.0S (typ.) • Low leakage current: IDSS = 10 μA (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.