Datasheet4U Logo Datasheet4U.com

K2467 Datasheet - Toshiba

K2467 2SK2467

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2467 2SK2467 High-Power Amplifier Application High breakdown voltage: VDSS = 180 V High forward transfer admittance: |Yfs| = 4.0 S (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range VDSS VGSS ID PD Tch Tstg 180 ±20 9 8.

K2467-Toshiba.pdf

Preview of K2467 PDF
K2467 Datasheet Preview Page 2 K2467 Datasheet Preview Page 3

Datasheet Details

Part number:

K2467

Manufacturer:

Toshiba ↗

File Size:

101.89 KB

Description:

2sk2467.

📁 Related Datasheet

k246 Silicon N-Channel Junction Type Field Effect Transistor (Toshiba)

K2461 2SK2461 (NEC)

K2462 2SK2462 (NEC)

K2466 2SK2466 (Toshiba)

K240 Silicon Zener Diodes (Aeroflex)

K240 LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE (Knox Inc)

K2400EH70 High Energy Bidirectional SIDACs (Littelfuse)

K2400G Sidac (JIEJIE)

TAGS

K2467 K2467 2SK2467 Toshiba

K2467 Distributor