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K2467 Datasheet - Toshiba

K2467 - 2SK2467

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2467 2SK2467 High-Power Amplifier Application High breakdown voltage: VDSS = 180 V High forward transfer admittance: |Yfs| = 4.0 S (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range VDSS VGSS ID PD Tch Tstg 180 ±20 9 8

K2467-Toshiba.pdf

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Part number:

K2467

Manufacturer:

Toshiba ↗

File Size:

101.89 KB

Description:

2sk2467.

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