K3397 Datasheet - Toshiba

K3397 2SK3397

2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications z z Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) High forward transfer admittance: |Yfs| = 110 S (typ.) Unit: mm z Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) www.DataSheet4U.com z Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain.

K3397 Datasheet (248.05 KB)