K3407 Datasheet - Toshiba

K3407 2SK3407

www.DataSheet4U.com 2SK3407 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3407 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) Enhancement-mode: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Ga.

K3407 Datasheet (256.73 KB)