www.DataSheet4U.com 2SK3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK3497 High Power Amplifier Application Unit: mm High breakdown voltage: VDSS = 180V Complementary to 2SJ618 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain source voltage VDSS 180 Gate source voltage VGSS ±12 Drain current DC (Note ) Pulse (Note ) ID IDP 10 30 Drain power dissipation (Tc = 25°C) PD 130 Channel temperature Tch 150 .
