K3543 Datasheet - Toshiba

K3543 2SK3543

2SK3543 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3543 Switching Regulator and DC-DC Converter Applications Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance: |Yfs| = 1.3 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain.

K3543-Toshiba.pdf