Datasheet Specifications
- Part number
- MG25Q1BS11
- Manufacturer
- Toshiba ↗
- File Size
- 176.30 KB
- Datasheet
- MG25Q1BS11_ToshibaSemiconductor.pdf
- Description
- Silicon N - Channel IGBT
Description
TOSHIBA IGBT Module Silicon N - Channel IGBT MG25Q1BS11 High Power Switching Applications Motor Control Applications MG25Q1BS11 Unit: mm l Enhanceme.
Applications
* Motor Control Applications MG25Q1BS11 Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Collector power dissipation (Tc = 25°C) JunctionMG25Q1BS11 Distributors
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