MG25Q1BS11 Datasheet - Toshiba

MG25Q1BS11 Silicon N - Channel IGBT

TOSHIBA IGBT Module Silicon N - Channel IGBT MG25Q1BS11 High Power Switching Applications Motor Control Applications MG25Q1BS11 Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature Range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGE.

MG25Q1BS11 Datasheet (176.30 KB)

MG25Q1BS11 Datasheet Preview — Preview of MG25Q1BS11 PDF

Datasheet Details

Part number:

MG25Q1BS11

Manufacturer:

Toshiba ↗

File Size:

176.30 KB

Description:

Silicon n - channel igbt.

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