MG25Q1BS11 Datasheet (Toshiba) - Silicon N

MG25Q1BS11, Silicon N - Channel IGBT

TOSHIBA IGBT Module Silicon N - Channel IGBT MG25Q1BS11 High Power Switching Applications Motor Control Applications MG25Q1BS11 Unit: mm l Enhancement-mode l The electrodes are isolated from case.

Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature Range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGE