MG25Q6ES42 Silicon N Channel IGBT GTR Module

Toshiba

Description

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications .

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Datasheet Specifications

Part number: MG25Q6ES42
Manufacturer: Toshiba ↗
File Size: 595.24 KB
Datasheet: MG25Q6ES42_ToshibaSemiconductor.pdf
Description: Silicon N Channel IGBT GTR Module

Features

* 6 IGBTs are built into 1 package
* High speed:
* Low saturation voltage:
* Enhancement mode tf = 0.5µs (Max. ) trr = 0.5µs (Max. ) VCE (sat) = 4.0V (Max. )
* The electrodes are isolated from case Maximum Ratings (Ta = 25°C) CHARACTERISTICS Collector-Emit

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MG25Q6ES42 Silicon Channel IGBT GTR Module Toshiba

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