MG25Q6ES42 Datasheet - Toshiba

Datasheet Details

Part number:

MG25Q6ES42

Manufacturer:

File Size:

595.24 KB

Description:

Silicon n channel igbt gtr module.

MG25Q6ES42, Silicon N Channel IGBT GTR Module

MG25Q6ES42 Features

* 6 IGBTs are built into 1 package

* High speed:

* Low saturation voltage:

* Enhancement mode tf = 0.5µs (Max.) trr = 0.5µs (Max.) VCE (sat) = 4.0V (Max.)

* The electrodes are isolated from case Maximum Ratings (Ta = 25°C) CHARACTERISTICS Collector-Emit

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