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MG25Q2YS40 - Silicon N Channel IGBT GTR Module

Toshiba

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Datasheet Details

Part number	MG25Q2YS40
Manufacturer	Toshiba ↗
File Size	597.15 KB
Description	Silicon N Channel IGBT GTR Module
Datasheet	MG25Q2YS40_ToshibaSemiconductor.pdf

MG25Q2YS40 Product details

Features

High input impedance.
High speed:.
Low saturation voltage:.
Enhancement mode tf = 0.5µs (Max. ) trr = 0.5µs (Max. ) VCE (sat)= 4.0V (Max. ).
The electrodes are isolated from case.
Includes a complete half bridge card in one package Maximum Ratings (Ta = 25°C).

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Published: Apr 29, 2005 |