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MG25Q2YS40 Datasheet - Toshiba

MG25Q2YS40 Silicon N Channel IGBT GTR Module

MG25Q2YS40 Features

* High input impedance

* High speed:

* Low saturation voltage:

* Enhancement mode tf = 0.5µs (Max.) trr = 0.5µs (Max.) VCE (sat)= 4.0V (Max.)

* The electrodes are isolated from case

* Includes a complete half bridge card in one package Maximum Ra

MG25Q2YS40_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

MG25Q2YS40

Manufacturer:

Toshiba ↗

File Size:

597.15 KB

Description:

Silicon n channel igbt gtr module.

MG25Q2YS40 Distributor

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MG25Q2YS40 MG25Q2YS40 Silicon Channel IGBT GTR Module Toshiba