MG25Q2YS40 Silicon N Channel IGBT GTR Module

Toshiba

Description

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications .

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Datasheet Specifications

Part number: MG25Q2YS40
Manufacturer: Toshiba ↗
File Size: 597.15 KB
Datasheet: MG25Q2YS40_ToshibaSemiconductor.pdf
Description: Silicon N Channel IGBT GTR Module

Features

* High input impedance
* High speed:
* Low saturation voltage:
* Enhancement mode tf = 0.5µs (Max. ) trr = 0.5µs (Max. ) VCE (sat)= 4.0V (Max. )
* The electrodes are isolated from case
* Includes a complete half bridge card in one package Maximum Ra

MG25Q2YS40 Distributors

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MG25Q2YS40 Silicon Channel IGBT GTR Module Toshiba

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