MG25Q2YS40 Datasheet - Toshiba

MG25Q2YS40, Silicon N Channel IGBT GTR Module

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications .

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MG25Q2YS40_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

MG25Q2YS40

Manufacturer:

Toshiba ↗

File Size:

597.15 KB

Description:

Silicon N Channel IGBT GTR Module

Features

* High input impedance
* High speed:
* Low saturation voltage:
* Enhancement mode tf = 0.5µs (Max. ) trr = 0.5µs (Max. ) VCE (sat)= 4.0V (Max. )
* The electrodes are isolated from case
* Includes a complete half bridge card in one package Maximum Ra

MG25Q2YS40 Distributors

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MG25Q2YS40 Silicon Channel IGBT GTR Module Toshiba

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