MT4S200U SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE TRANSISTOR

Toshiba

Description

MT4S200U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S200U UHF-SHF Low Noise Amplifier Application Unit: mm .

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MT4S200U Datasheet Preview — Preview of MT4S200U PDF

Datasheet Specifications

Part number: MT4S200U
Manufacturer: Toshiba ↗
File Size: 161.00 KB
Datasheet: MT4S200U-Toshiba.pdf
Description: SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE TRANSISTOR

Features

* Low Noise Figure :NF=1.7dB (@f=5.8GHz)
* High Gain:|S21e|2=9.5dB (@f=5.8GHz) Marking 4 3 P２ 12 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Pow

Applications

* (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc. ). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which ma

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MT4S200U SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE TRANSISTOR Toshiba

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