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RN1112F - Silicon NPN Epitaxial Type Transistor

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Part number RN1112F
Manufacturer Toshiba
File Size 153.94 KB
Description Silicon NPN Epitaxial Type Transistor
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RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1112F,RN1113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2112F, RN2113F Equivalent Circuit Maximum Ratings (Ta = 25°C) Characterisstic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Rating 50 50 Unit JEDEC V EIAJ V TOSHIBA 5V 100 mA 100 mW 150 °C −55~150 °C ― ― 2-2HA1A Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off curr
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