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RN1112F Datasheet - Toshiba

RN1112F Silicon NPN Epitaxial Type Transistor

RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1112F,RN1113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2112F, RN2113F Equivalent Circuit Maximum Ratings (Ta = 25°C) Characterisstic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector pow.

RN1112F-Toshiba.pdf

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Datasheet Details

Part number:

RN1112F

Manufacturer:

Toshiba ↗

File Size:

153.94 KB

Description:

Silicon npn epitaxial type transistor.

RN1112F Distributor

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RN1112F RN1112F Silicon NPN Epitaxial Type Transistor Toshiba