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RN1113F, RN1112F Datasheet - Toshiba

RN1113F Silicon NPN Epitaxial Type Transistor

RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1112F,RN1113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2112F, RN2113F Equivalent Circuit Maximum Ratings (Ta = 25°C) Characterisstic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector pow.

RN1112F-Toshiba.pdf

This datasheet PDF includes multiple part numbers: RN1113F, RN1112F. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

RN1113F, RN1112F

Manufacturer:

Toshiba ↗

File Size:

153.94 KB

Description:

Silicon npn epitaxial type transistor.

Note:

This datasheet PDF includes multiple part numbers: RN1113F, RN1112F.
Please refer to the document for exact specifications by model.

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TAGS

RN1113F RN1112F Silicon NPN Epitaxial Type Transistor Toshiba

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