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RN2130FV Silicon PNP Transistor

RN2130FV Description

RN2130FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2130FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit App.

RN2130FV Applications

* Unit : mm 0.22±0.05 0.32±0.05 Built-in bias resistors Simplified circuit design Reduced quantity of parts and manufacturing process Complementary to RN1130FV 1.2±0.05 0.8±0.05 1 1.2±0.05 0.8±0.05 0.4 0.4 Equivalent Circuit 2 3 0.13±0.05 0.5±0.05 VESM 1.BASE 2.EMITTER 3.COLLECTOR Maximu

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Silicon PNP Transistor Toshiba
Toshiba RN2130FV-like datasheet