RN2130FV Datasheet (Toshiba) - Silicon PNP Transistor

RN2130FV, Silicon PNP Transistor

RN2130FV TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2130FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm 0.22±0.05 0.32±0.05 Built-in bias resistors Simplified circuit design Reduced quantity of parts and manufacturing process Complementary to RN1130FV 1.2±0.05 0.8±0.05 1 1.2±0.05 0.8±0.05 0.4 0.4 Equivalent Circuit 2 3 0.13±0.05 0.5±0.05 VESM 1.BASE 2.EMITTER 3.COLLECTOR Maximum Ratings (Ta = 25°C) JEDEC ― Charact