RN2312 - Silicon PNP Epitaxial Type Transistor

Toshiba

Datasheet Details

Part number	RN2312
Manufacturer	Toshiba
File Size	0.97 MB
Description	Silicon PNP Epitaxial Type Transistor
Datasheet	RN2312 Datasheet
Additional preview pages of the RN2312 datasheet.

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Full PDF Text Transcription

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RN2312, RN2313 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2312, RN2313 Switching, Inverter Circuit, Interface Circuit and Driver Circuit  With built-in bias resistors.  Simplify circuit design  Reduce a quantity of parts and manufacturing process and miniaturize equipment.  Various resistance values are available to suit various circuit designs.  Complementary to RN1312 to RN1313 Equivalent Circuit Unit: mm Absolute Maximum Ratings (Ta = 25°C) USM JEDEC ― JEITA SC-70 TOSHIBA 2-2E1A Weight: 0.006g (typ.

Published: May 22, 2024 |