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TC518129AFWL-10LV

SILICON GATE CMOS PSEUDO STATIC RAM

TC518129AFWL-10LV Features

* a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RIW thus simplifying the microprocessor interface. A CS standby mode interface is incorporated in the TC518129A-LV family, with the CE2 pin in the TC518128A-LV family changed

TC518129AFWL-10LV General Description

The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A-LV operates from a single power.

TC518129AFWL-10LV Datasheet (470.28 KB)

Preview of TC518129AFWL-10LV PDF

Datasheet Details

Part number:

TC518129AFWL-10LV

Manufacturer:

Toshiba ↗

File Size:

470.28 KB

Description:

Silicon gate cmos pseudo static ram.

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TC518129AFWL-10LV SILICON GATE CMOS PSEUDO STATIC RAM Toshiba

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