TC518129AFWL-12LV Datasheet, Ram, Toshiba

✔ TC518129AFWL-12LV Features

a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RIW thus simplifying the microprocessor inter

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TC518129AFWL-12LV

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Toshiba ↗

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📄 Datasheet

Description:

Silicon gate cmos pseudo static ram. The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV utilizes a one

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TC518129AFWL-12LV SILICON GATE CMOS PSEUDO STATIC RAM Toshiba