TC551001AFI-10L Datasheet PDF - Toshiba SILICON GATE CMOS STATIC RAM Specs

TC551001AFI-10L - SILICON GATE CMOS STATIC RAM

This page provides the datasheet information for the TC551001AFI-10L, a member of the TC551001API-85L SILICON GATE CMOS STATIC RAM family.

Datasheet Summary

Description

The TC551001API is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply.

Features

with an operating current of 5mNMHz (typ. ) and a minimum cycle time of 85ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode in which the standby current is 2~ typically. The TC551001API has three control inputs. Chip enable inputs (CE1, CE2) allow for device selection and data retention control, while an output enable input (OE) provides fast memory access. The TC551001API is suitable for use in microprocessor systems where high speed, low power, and.

Datasheet Details

Part number	TC551001AFI-10L
Manufacturer	Toshiba
File Size	270.13 KB
Description	SILICON GATE CMOS STATIC RAM
Datasheet	TC551001AFI-10L Datasheet
Additional preview pages of the TC551001AFI-10L datasheet.

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Full PDF Text Transcription

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TOSHIBA SILICON GATE CMOS TC55100lAPI/AFI/AFIl/ATRI-85L/IOL 131,072 WORD x 8 BIT STATIC RAM Description The TC551001API is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mNMHz (typ.) and a minimum cycle time of 85ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode in which the standby current is 2~ typically. The TC551001API has three control inputs. Chip enable inputs (CE1, CE2) allow for device selection and data retention control, while an output enable input (OE) provides fast memory access.

Published: Feb 20, 2017 |