TC55V1864J-12 Datasheet, Sram, Toshiba

TC55V1864J-12 Features

• Sram low power dissipation when the device is deselected using chip enable (CE), and has an output enable input (OE) for fast memory access. Byte access is supported by upper and lower byte

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Part number:

TC55V1864J-12

Manufacturer:

Toshiba ↗

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251.64kb

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📄 Datasheet

Description:

18-bit cmos sram. The TC55V1864J/FT is a 1,179,648 bit high speed CMOS static random access memory organized as 65,536 words by 18 bits and operated fr

TC55V1864J-12 Application

• Applications such as cache memory and high speed storage. All inputs and outputs are LVTTL compatible. The TC55V1864J/FT is available in a 400mil wi

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TC55V1864J-12

Toshiba

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TC55V1864J-10 - 18-Bit CMOS SRAM (Toshiba)
TOSHIBA 1l:55\T1864J/F1l-10/12/15 SILICON GATE CMOS PRELIMINARY 65,536 WORD x 18 BIT CMOS STATIC RAM Description The TC55V1864J/FT is a 1,179,648.

TC55V1864J-15 - 18-Bit CMOS SRAM (Toshiba)
TOSHIBA 1l:55\T1864J/F1l-10/12/15 SILICON GATE CMOS PRELIMINARY 65,536 WORD x 18 BIT CMOS STATIC RAM Description The TC55V1864J/FT is a 1,179,648.

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TOSHIBA 1l:55\T1864J/F1l-10/12/15 SILICON GATE CMOS PRELIMINARY 65,536 WORD x 18 BIT CMOS STATIC RAM Description The TC55V1864J/FT is a 1,179,648.

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TOSHIBA 1l:55\T1864J/F1l-10/12/15 SILICON GATE CMOS PRELIMINARY 65,536 WORD x 18 BIT CMOS STATIC RAM Description The TC55V1864J/FT is a 1,179,648.

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