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TC59SM904AFTL, TC59SM916AFT (TC59SM904AFT - TC59SM916AFT) SDRAM

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Description

www.DataSheet4U.com TC59SM916/08/04AFT/AFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 8,388,608-WORDS × 4BANKS.
7&60$)7$)7/ LV D &026 VQFKURQRXV GQDPLF UDQGRP DFFHVV PHPRU RUJDQL]HG DV ZRUGV  EDQNV × ×  ELWV DQG 7&60$)7$)7/ LV RUJDQL].

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This datasheet PDF includes multiple part numbers: TC59SM904AFTL, TC59SM916AFT. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
TC59SM904AFTL, TC59SM916AFT
Manufacturer
Toshiba ↗
File Size
2.58 MB
Datasheet
TC59SM916AFT_Toshiba.pdf
Description
(TC59SM904AFT - TC59SM916AFT) SDRAM
Note
This datasheet PDF includes multiple part numbers: TC59SM904AFTL, TC59SM916AFT.
Please refer to the document for exact specifications by model.

Features

* PARAMETER tCK Clock Cycle Time (min) TC59SM916/M908/M904 -70 7 ns 40 ns 5.4 ns 56 ns TBD TBD TBD -75 7.5 ns 45 ns 5.4 ns 65 ns TBD TBD TBD -80 8 ns 48 ns 6 ns 68 ns TBD TBD TBD tRAS Active to Precharge Command Period (min) tAC tRC Access Time from CLK (max) Ref/Active to Ref/Active Command Period (

Applications

* (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc. ). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which m

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