Datasheet Specifications
- Part number
- TC59SM916AFT
- Manufacturer
- Toshiba ↗
- File Size
- 2.58 MB
- Datasheet
- TC59SM916AFT_Toshiba.pdf
- Description
- (TC59SM904AFT - TC59SM916AFT) SDRAM
Description
www.DataSheet4U.com TC59SM916/08/04AFT/AFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 8,388,608-WORDS × 4BANKS.
Features
* PARAMETER tCK Clock Cycle Time (min) TC59SM916/M908/M904 -70 7 ns 40 ns 5.4 ns 56 ns TBD TBD TBD -75 7.5 ns 45 ns 5.4 ns 65 ns TBD TBD TBD -80 8 ns 48 ns 6 ns 68 ns TBD TBD TBD tRAS Active to Precharge Command Period (min) tAC tRC Access Time from CLK (max) Ref/Active to Ref/Active Command Period (Applications
* (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc. ). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which mTC59SM916AFT Distributors
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