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TK155E65Z Datasheet - Toshiba

TK155E65Z Silicon N-Channel MOSFET

TK155E65Z Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.73 mA) 3. Packaging and Internal Circuit TK155E65Z 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Rat

TK155E65Z-Toshiba.pdf

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Datasheet Details

Part number:

TK155E65Z

Manufacturer:

Toshiba ↗

File Size:

480.20 KB

Description:

Silicon n-channel mosfet.

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TK155E65Z TK155E65Z Silicon N-Channel MOSFET Toshiba

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