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TK6P53D N-Channel MOSFET

TK6P53D Description

TK6P53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK6P53D Switching Regulator Applications Unit: mm 1.08±0.2 * L.

TK6P53D Applications

* Unit: mm 1.08±0.2
* Low drain-source ON-resistance: RDS (ON) = 1.1 Ω (typ. )
* High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ. )
* Low leakage current: IDSS = 10 μA (max) (VDS = 525 V)
* Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 6.6 ± 0.2 5.

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