* (1) Fast reverse recovery time: trr = 44 ns (typ.) (2) Small reverse recovery charge : Qrr = 42 nC (typ.) (3) Small gate charge: QSW = 20 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 6 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V) (6) Enhancement mode: V
TK7R2E15Q5 Datasheet (517.15 KB)
TK7R2E15Q5
517.15 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS -H) TK7R2E15Q5 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulat.
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