TK70A06J1 - N-Channel MOSFET
TK70A06J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK70A06J1 Switching Regulator Application High-Speed switching Small gate charge: Qg = 87nC (typ.) Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 80 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) Enhancement-mode: Vth = 1.1~2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Max
TK70A06J1 Features
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