TK70J04J3 Datasheet (Toshiba Semiconductor)

TK70J04J3, Silicon N-Channel MOSFET

TK70J04J3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅢ) TK70J04J3 Motor Drive Application Unit: mm z Low drain-source ON resistance: RDS (ON) = 3.0 mΩ (typ.) z High forward transfer admittance: |Yfs| = 120 S (typ.) z Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) z Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain source voltage Drain gate voltage (RGS = 20 kΩ) Gate