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TK7S10N1Z Silicon N-Channel MOSFET

TK7S10N1Z Description

MOSFETs Silicon N-channel MOS (U-MOS-H) TK7S10N1Z 1.Applications * Automotive * Switching Voltage Regulators * Motor Drivers.

TK7S10N1Z Features

* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 40 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TK7S10N1Z 1: Gate 2: Drain (heatsink) 3: Sou

TK7S10N1Z Applications

* Automotive
* Switching Voltage Regulators

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Silicon N-Channel MOSFET Toshiba
Toshiba TK7S10N1Z-like datasheet