TMM2015BP-12 Datasheet PDF (Static RAM) | Download Toshiba TMM2015BP-12

TMM2015BP-12 - Static RAM

This page provides the datasheet information for the TMM2015BP-12, a member of the TMM2015BP-90 Static RAM family.

Description

The TMM2015BP is a 16, 384 bits high speed and low power static random access memory organized as 2, 048 words by 8 bits and operates from a single 5V supply.

Features

with a maximum access time of 90ns/ 100ns/120ns/150ns and maximum operating current of 50mA. When CS is a logical high, the device is placed In a low power standby mode in which maximum standby current is 5mA. Thus the TMM201 nBP IS most sUitable for use In microcomputer oenpheral memory where the low power.

Datasheet Details

Part number	TMM2015BP-12
Manufacturer	Toshiba
File Size	224.01 KB
Description	Static RAM
Datasheet	TMM2015BP-12 Datasheet
Additional preview pages of the TMM2015BP-12 datasheet.

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Full PDF Text Transcription

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TOSHIBA MOS MEMORY PRODUCTS 2,048 WORD X 8 BIT STATIC RAM TMM2015BP-90, TMM2015BP-12 SILICON MONOLITHIC TMM2015BP-10, TMM2015BP-15N-CHANNEL SILICON GATE MOS PROCESS DESCRIPTION The TMM2015BP is a 16, 384 bits high speed and low power static random access memory organized as 2, 048 words by 8 bits and operates from a single 5V supply. Toshiba's high performance device technology provides both high speed and low power features with a maximum access time of 90ns/ 100ns/120ns/150ns and maximum operating current of 50mA. When CS is a logical high, the device is placed In a low power standby mode in which maximum standby current is 5mA. Thus the TMM201 nBP IS most sUitable for use In microcomputer oenpheral memory where the low power applications are required.

Published: Jan 18, 2017 |