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FDP52N20 / FDPF52N20T N-Channel MOSFET
October 2007
UniFETTM
FDP52N20 / FDPF52N20T
N-Channel MOSFET
200V, 52A, 0.049Ω Features
• RDS(on) = 0.041Ω ( Typ.)@ VGS = 10V, ID = 26A • Low gate charge ( Typ. 49nC) • Low Crss ( Typ. 66pF) • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant
tm
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.
TMP86FH09AMG Datasheet
