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TPH2R306NH Datasheet - Toshiba

TPH2R306NH MOSFETs

TPH2R306NH Features

* (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 26 nC (typ.) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit

TPH2R306NH-Toshiba.pdf

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Datasheet Details

Part number:

TPH2R306NH

Manufacturer:

Toshiba ↗

File Size:

234.79 KB

Description:

Mosfets.

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