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TPH2R805PL - Silicon N-channel MOSFET

Features

  • (1) High-speed switching (2) Small gate charge : QSW = 22 nC (typ. ) (3) Small output charge : Qoss = 55 nC (typ. ) (4) Low drain-source on-resistance : RDS(ON) =2.1 mΩ (typ. )(VGS = 10 V ) (5) Low leakage current : IDSS = 10 µA (max)(VDS = 45 V ) (6) Enhancement mode : Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TPH2R805PL SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-07 2016-12-26 Rev.

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Datasheet Details

Part number TPH2R805PL
Manufacturer Toshiba
File Size 537.87 KB
Description Silicon N-channel MOSFET
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Full PDF Text Transcription

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MOSFETs Silicon N-channel MOS (U-MOS-H) TPH2R805PL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge : QSW = 22 nC (typ.) (3) Small output charge : Qoss = 55 nC (typ.) (4) Low drain-source on-resistance : RDS(ON) =2.1 mΩ (typ.)(VGS = 10 V ) (5) Low leakage current : IDSS = 10 µA (max)(VDS = 45 V ) (6) Enhancement mode : Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TPH2R805PL SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-07 2016-12-26 Rev.1.0 TPH2R805PL 4.
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