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TPH2R506PL - Silicon N-channel MOSFET

Features

  • (1) High-speed switching (2) Small gate charge : QSW = 19 nC (typ. ) (3) Small output charge : Qoss = 51 nC (typ. ) (4) Low drain-source on-resistance : RDS(ON) =1.9 mΩ (typ. )(VGS = 10 V ) (5) Low leakage current : IDSS = 10 µA (max)(VDS = 60 V ) (6) Enhancement mode : Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TPH2R506PL SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance(N) The package can be selected.

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Datasheet Details

Part number TPH2R506PL
Manufacturer Toshiba
File Size 714.85 KB
Description Silicon N-channel MOSFET
Datasheet download datasheet TPH2R506PL Datasheet
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Full PDF Text Transcription

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MOSFETs Silicon N-channel MOS (U-MOS-H) TPH2R506PL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge : QSW = 19 nC (typ.) (3) Small output charge : Qoss = 51 nC (typ.) (4) Low drain-source on-resistance : RDS(ON) =1.9 mΩ (typ.)(VGS = 10 V ) (5) Low leakage current : IDSS = 10 µA (max)(VDS = 60 V ) (6) Enhancement mode : Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TPH2R506PL SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance(N) The package can be selected according to your preference. For details, please contact your TOSHIBA sales representative.
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