TPH2R306NH - MOSFETs

Product Overview

Toshiba

Part number	TPH2R306NH
Manufacturer	Toshiba
File Size	234.79 KB
Description	MOSFETs
Datasheet	TPH2R306NH Datasheet
Additional preview pages of the TPH2R306NH datasheet.

(1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 26 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current.

📁 Similar Datasheet

TPH200A - Current Transducers (Topstek)
TPH20A-LTC - Current Transducers (Topstek)
TPH2405D - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH2405DA - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH2405S - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH2409D - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH2409DA - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH2409S - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)

Other Datasheets by Toshiba

Published: Sep 4, 2014 |