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TPH2R306NH - MOSFETs

Features

  • (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 26 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current.

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Datasheet Details

Part number TPH2R306NH
Manufacturer Toshiba
File Size 234.79 KB
Description MOSFETs
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Full PDF Text Transcription

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TPH2R306NH MOSFETs Silicon N-channel MOS (U-MOS-H) TPH2R306NH 1. Applications • • • DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features (1) (2) (3) (4) (5) High-speed switching Small gate charge: QSW = 26 nC (typ.) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4.
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