XPH3R304PB - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

(1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit XPH3R304PB SOP Advance(WF) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2019-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2022-09 2022-12-21 Rev.2.0 XPH3R304PB 4. Absolute M.

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Published: Apr 29, 2024 |