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XPH4R10ANB Datasheet - Toshiba

XPH4R10ANB Silicon N-Channel MOSFET

XPH4R10ANB Features

* (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 3.4 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (5) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit XPH4R10ANB SOP Adva

XPH4R10ANB-Toshiba.pdf

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Datasheet Details

Part number:

XPH4R10ANB

Manufacturer:

Toshiba ↗

File Size:

539.49 KB

Description:

Silicon n-channel mosfet.

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XPH4R10ANB XPH4R10ANB Silicon N-Channel MOSFET Toshiba

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