XPH4R10ANB - Silicon N-Channel MOSFET
XPH4R10ANB Features
* (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 3.4 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (5) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit XPH4R10ANB SOP Adva
