XPH6R30ANB - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

(1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 5.3 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (5) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit XPH6R30ANB SOP Advance(WF) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2018-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2019-11 2020-06-24 Rev.5.0 XPH6R30ANB 4. Absolute M.

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Published: Apr 29, 2024 |