XPH8R316MC - Silicon P-Channel MOSFET

Toshiba

Datasheet Details

(1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 6.4 mΩ (typ. ) (VGS = -10 V) (4) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (5) Enhancement mode: Vth = -1.0 to -2.1 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit XPH8R316MC SOP Advance(WF) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2018-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2023-05 2023-04-13 Rev.3.0 XPH8R316MC 4. Absol.

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Published: Apr 29, 2024 |