2SK2996 Datasheet - Toshiba Semiconductor

www.DataSheet4U.com 2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2996 DC DC Converter, Relay Drive and Motor Drive Applications z Low drain source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.74 Ω (typ.) : |Yfs| = 6.8 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 600 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain