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C5029 2SC5029

C5029 Description

2SC5029 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC5029 Power Amplifier Applications Power Switching Applications Industrial Appl.

C5029 Applications

* Power Switching Applications Industrial Applications Unit: mm
* Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A, IB = 0.05 A) High collector power dissipation: PC = 1.3 W High-speed switching: tstg = 1.0 μs (typ. ) Complementary to 2SA1892 Absolute M

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2SC5029 Toshiba Semiconductor
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