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K7A50D TK7A50D

K7A50D Description

TK7A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK7A50D Switching Regulator Applications * * *

K7A50D Features

* act (“Unintended Use”). Unintended

K7A50D Applications

* Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ. ) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ. ) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings

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TK7A50D Toshiba Semiconductor
Toshiba Semiconductor K7A50D-like datasheet