BAV99T - SWITCHING DIODE

This page provides the datasheet information for the BAV99T, a member of the BAV70T SWITCHING DIODE family.

Datasheet Summary

Features

Power dissipation PD: 150 mW (Tamb=25℃) Forward Current IF: Reverse Voltage 75 m A VR: 85 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ SOT-523 BAS16T Marking: A2 BAW56T Marking: JD BAV70T Marking: JJ BAV99T Marking: JE.

Transys

📥 Download Datasheet

Datasheet Details

Part number	BAV99T
Manufacturer	Transys
File Size	70.88 KB
Description	SWITCHING DIODE
Datasheet	BAV99T Datasheet
Additional preview pages of the BAV99T datasheet.

📁 Similar Datasheet

BAV99T - Silicon Switching Diode (Infineon Technologies AG)
BAV99T - Switching Diodes (MCC)
BAV99T - Switching Diode (LGE)
BAV99T - Switching Diode (JCET)
BAV99T - (BAV70T / BAV99T) Surface Mount Switching Diodes (Weitron Technology)
BAV99T - SURFACE-MOUNT FAST SWITCHING DIODE (DIODES)
BAV99T - Fast Switching Diode (Fairchild Semiconductor)
BAV99T - Surface Mount Switching Diodes (SeCoS)
BAV99T - SURFACE MOUNT FAST SWITCHING DIODE (Won-Top Electronics)
BAV99T - Surface Mount Fast Switching Diode (GME)

Other Datasheets by Transys

BAV70T - SWITCHING DIODE

Full PDF Text Transcription

Click to expand full text

Transys Electronics LIMITED SOT-523 Plastic-Encapsulated Diodes BAS16T/BAW56T/BAV70T/BAV99T SWITCHING DIODE FEATURES Power dissipation PD: 150 mW (Tamb=25℃) Forward Current IF: Reverse Voltage 75 m A VR: 85 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ SOT-523 BAS16T Marking: A2 BAW56T Marking: JD BAV70T Marking: JJ BAV99T Marking: JE ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reverse recovery time Symbol V(BR) IR1 IR2 VF CD t rr Test conditions IR= 100µA VR=75V VR=25V IF=1mA IF=10mA IF=50mA IF=150mA VR=0V, f=1MHz MIN MAX 85 2 0.03 715 855 1000 1250 1.

Published: Jul 3, 2016 |