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AH215

1W High Linearity InGaP HBT Amplifier

AH215 Features

* 400 

*  2300 MHz

* 18 dB Gain at 900 MHz

* +31.5 dBm P1dB

* +46 dBm Output IP3

* +5 V Single Positive Supply

* Lead-free / green / RoHS-compliant SOIC-8 Package 8-Pin SOIC-8 SMT Package Functional Block Diagram Vref 1 N/C 2 RF_In 3 N/C 4 Pin 1 Reference Mark 8 Vbia

AH215 General Description

The AH215 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP / GaAs HBT is able to achieve superior performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +31.5 dBm of compressed 1-dB power. The part is housed in a lead-free / g.

AH215 Datasheet (817.63 KB)

Preview of AH215 PDF

Datasheet Details

Part number:

AH215

Manufacturer:

TriQuint Semiconductor

File Size:

817.63 KB

Description:

1w high linearity ingap hbt amplifier.
RFMD + TriQuint = Qorvo Applications
* Final Stage Amplifiers for Repeaters
* Mobile Infrastructure AH215 1 W High Linearity InGaP HBT Amplif.

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AH215 High Linearity InGaP HBT Amplifier TriQuint Semiconductor

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