Datasheet Details
Part number:
T1G6000528-Q3
Manufacturer:
TriQuint Semiconductor
File Size:
1.62 MB
Description:
Gan rf power transistor.
T1G6000528-Q3_TriQuintSemiconductor.pdf
T1G6000528-Q3_TriQuintSemiconductor.pdf
Datasheet Details
Part number:
T1G6000528-Q3
Manufacturer:
TriQuint Semiconductor
File Size:
1.62 MB
Description:
Gan rf power transistor.
T1G6000528-Q3, GaN RF Power Transistor
5.0mm x 4.0mm ceramic air cavity straight lead package Base CuMo www.DataSheet.net/ General Description The TriQuint T1G6000528-Q3 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz.
The device is constructed with TriQuint’s proven
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