T1G6000528-Q3 - GaN RF Power Transistor

TriQuint Semiconductor

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Datasheet Details

Part number	T1G6000528-Q3
Manufacturer	TriQuint Semiconductor
File Size	1.62 MB
Description	GaN RF Power Transistor
Datasheet	T1G6000528-Q3_TriQuintSemiconductor.pdf

T1G6000528-Q3 Product details

Description

5.0mm x 4.0mm ceramic air cavity straight lead package Base CuMo www.DataSheet.net/ General Description The TriQuint T1G6000528-Q3 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz.The device is constructed with TriQuint’s proven 0.25 µm production process, which

Features

Frequency: DC to 6 GHz.
Linear Gain: >10 dB at 6 GHz.
Operating Voltage: 28 V.
Output Power (P3dB): >7 W at 6 GHz.
Lead-free and RoHS compliant.
Low thermal resistance package Package Information Package Type Q3.

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Published: Jul 1, 2012 |