* Frequency: DC to 6 GHz
* Linear Gain: >10 dB at 6 GHz
* Operating Voltage: 28 V
* Output Power (P3dB): >7 W at 6 GHz
* Lead-free and RoHS compliant
* Low thermal resistance package Package Information Package Type Q3 Description 5.0mm x 4.0mm
T1G6000528-Q3 Datasheet (1.62 MB)
T1G6000528-Q3
TriQuint Semiconductor
1.62 MB
Gan rf power transistor.
T1G6000528-Q3
7W, 28V, DC
* 6 GHz, GaN RF Power Transistor
Applications
* Wideband and narrowband defense and commercial communicati.
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T1-1T - RF Transformer
(Mini-Circuits)
Surface Mount NON-CATALOG
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50Ω 0.08 to 200 MHz
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Operating Temperature
-20°C to 85°C
Storage Temperature
-55°C.
T1-1T-KK81 - RF Transformer
(Mini-Circuits)
Surface Mount
RF Transformer
50Ω 0.08 to 200 MHz
T1-1T-KK81+ T1-1T-KK81
Maximum Ratings
Operating Temperature
-20°C to 85°C
Storage Temperature
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T1-1T-KK81+ - RF Transformer
(Mini-Circuits)
Surface Mount
RF Transformer
50Ω 0.08 to 200 MHz
T1-1T-KK81+ T1-1T-KK81
Maximum Ratings
Operating Temperature
-20°C to 85°C
Storage Temperature
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