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T1G6000528-Q3 Datasheet - TriQuint Semiconductor

T1G6000528-Q3 GaN RF Power Transistor

5.0mm x 4.0mm ceramic air cavity straight lead package Base CuMo www.DataSheet.net/ General Description The TriQuint T1G6000528-Q3 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz. The device is constructed with TriQuint’s proven .

T1G6000528-Q3 Datasheet (1.62 MB)

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Datasheet Details

Part number:

T1G6000528-Q3

Manufacturer:

TriQuint Semiconductor

File Size:

1.62 MB

Description:

Gan rf power transistor.

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TAGS

T1G6000528-Q3 GaN Power Transistor TriQuint Semiconductor

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