T1G6001528-Q3 Datasheet, Transistor, TriQuint Semiconductor

T1G6001528-Q3 Features

• Transistor
• Frequency: DC to 6 GHz Output Power (P3dB): 18 W at 6 GHz Linear Gain: >10 dB at 6 GHz Operating Voltage: 28 V Low thermal resistance p

PDF File Details

Part number:

T1G6001528-Q3

Manufacturer:

TriQuint Semiconductor

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662.56kb

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📄 Datasheet

Description:

18 w gan rf power transistor. The TriQuint T1G6001528-Q3 is a 18 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB ga

T1G6001528-Q3 Application

• Applications
• General Purpose RF Power Jammers Military and Civilian Radar Prof

TAGS

T1G6001528-Q3

TriQuint Semiconductor

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