T1G6001032-SM Datasheet, Transistor, TriQuint Semiconductor

T1G6001032-SM Features

• Transistor
• Frequency: DC to 6 GHz
• Output Power (P3dB): 10 W Peak at 3.1 GHz
• Linear Gain: >17 dB at 3.1 GHz
• Operating Voltage: 32 V
• Low thermal res

PDF File Details

Part number:

T1G6001032-SM

Manufacturer:

TriQuint Semiconductor

File Size:

1.09MB

Download:

📄 Datasheet

Description:

Gan rf power transistor. The TriQuint T1G6001032-SM is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with

T1G6001032-SM Application

• Applications
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentati

TAGS

T1G6001032-SM

TriQuint Semiconductor

📁 Related Datasheet

T1G6001528-Q3 - 18 W GaN RF Power Transistor (TriQuint Semiconductor)
T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professi.

T1G6001528-Q3 - GaN RF Power Transistor (TriQuint Semiconductor)
T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professi.

T1G6000528-Q3 - GaN RF Power Transistor (TriQuint Semiconductor)
T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • Wideband and narrowband defense and mercial munication systems –– Ge.

T1G6003028-FS - DC-6GHz GaN RF Power Transistor (TriQuint Semiconductor)
T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio co.

T1G4005528-FS - GaN RF Power Transistor (TriQuint Semiconductor)
T1G4005528-FS Applications • Military radar • Civilian radar • Professional and military radio munications • Test instrumentation • Avionics •.

T1-1T - RF Transformer (Mini-Circuits)
Surface Mount NON-CATALOG RF Transformer 50Ω 0.08 to 200 MHz T1-1T Maximum Ratings Operating Temperature -20°C to 85°C Storage Temperature -55°C.

T1-1T-KK81 - RF Transformer (Mini-Circuits)
Surface Mount RF Transformer 50Ω 0.08 to 200 MHz T1-1T-KK81+ T1-1T-KK81 Maximum Ratings Operating Temperature -20°C to 85°C Storage Temperature .

T1-1T-KK81+ - RF Transformer (Mini-Circuits)
Surface Mount RF Transformer 50Ω 0.08 to 200 MHz T1-1T-KK81+ T1-1T-KK81 Maximum Ratings Operating Temperature -20°C to 85°C Storage Temperature .

T100 - n-channel transducer microphone preamplifiers (Siliconix)
n-channel H transducerImicrophone preamplifiers designed for • • • Performance Curves NYFA NYFC See Section 4 • Hearing Aid Input Stages • High .

T1000EC33G - Insulated Gate Bi-Polar Transistor (IXYS)
.