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T1G6001032-SM

GaN RF Power Transistor

T1G6001032-SM Features

* Frequency: DC to 6 GHz

* Output Power (P3dB): 10 W Peak at 3.1 GHz

* Linear Gain: >17 dB at 3.1 GHz

* Operating Voltage: 32 V

* Low thermal resistance package Functional Block Diagram General Description The TriQuint T1G6001032-SM is a 10 W (P3dB) discrete

T1G6001032-SM Datasheet (1.09 MB)

Preview of T1G6001032-SM PDF

Datasheet Details

Part number:

T1G6001032-SM

Manufacturer:

TriQuint Semiconductor

File Size:

1.09 MB

Description:

Gan rf power transistor.
T1G6001032-SM 10W, 32V, DC

* 6 GHz, GaN RF Power Transistor Applications

* Military radar

* Civilian radar

* Professio.

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TAGS

T1G6001032-SM GaN Power Transistor TriQuint Semiconductor

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