TGS2355 Datasheet - TriQuint Semiconductor

TGS2355 0.5-6GHz High Power GaN Switch

The TGS2355 is a single-pole, double-throw (SPDT) reflective switch fabricated on TriQuint’s 0.25um GaN on SiC production process. Operating from 0.5 to 6 GHz, the TGS2355 provides up to 100 W input power handling with < 1 dB insertion over most of the operating band and greater than 40 dB isolation.

TGS2355 Features

* Frequency Range: 0.5 - 6 GHz Insertion Loss: < 1.3 dB Power Handling: 100 W Isolation: 40 dB typical Control Voltages: 0 V/-40 V from either side of the MMIC

* Reflective Switch

* Chip Dimensions: 2.14 x 2.50 x 0.1 mm

* Functional Bloc

TGS2355-TriQuintSemiconductor.pdf