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TQHBT 100UA Gain Selectable Amplifier

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Description

Production Process InGaP HBT Foundry Service .
TriQuint’s TQHBT process is a highly reliable InGaP HBT process with three levels of interconnecting metal.

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Datasheet Specifications

Part number
TQHBT
Manufacturer
TriQuint Semiconductor
File Size
291.20 KB
Datasheet
TQHBT_TriQuintSemiconductor.pdf
Description
100UA Gain Selectable Amplifier

Features

* Metal 2 - 4um TQHBT
* Dielectric Metal 1 - 2um Dielectric E Emitter Metal 1 - 2um www. DataSheet4U. com B C B C NiCr MIM Metal 0 Base Collector
* Sub Collector Isolation Implant Buffer & Substrate

Applications

* High Density Interconnects;
* 2 Global, 1 Local
* Over 6 µm Total Thickness
* Dielectric Encapsulated Metals Thick Metal Interconnects:
* Enhanced Thermal Management
* Minimum Die Size Effective Base Ballasting for Maximum Gain 150 mm Wafers High-Q Passives Ni

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