* zLow gate charge zLow Crss (typical 23pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product F 1/7 Shenzhen Tuofeng Semiconductor Technology Co., Ltd ABSOLUTE RATINGS (Tc=25℃) SSS8N60 Parameter － Drain-Source Voltage Symbol VDSS Value JCS8N60S/B/C JCS8N60F 6
SSS8N60
Tuofeng Semiconductor
575.92 KB
N-channel mosfet.
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SSS8N60 N N-CHANNEL MOSFET
MAIN CHARACTERISTICS
ID 7.5 A VDSS 600 V Rdson（@Vgs=10V） 1.2 Ω Qg 54.
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